| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent measurement precision from decreasing owing to electrostatic charging when a pattern size of a reflection type photomask to be used for lithography using EUV light is measured. <P>SOLUTION: A multilayer film 20 is formed on a substrate 10 by laminating molybdenum and silicon alternately. As a top layer of the multilayer film 20, a capping layer 21 is laminated using molybdenum, silicon or other materials. On the capping layer 21, an absorption layer 30 is laminated so as to form a pattern. The absorption layer is processed using known lithography technique etc., to form the pattern 31. A dielectric constant of the capping layer 21 or absorption layer 30 is adjusted so as to balance an electrostatic charging state near a surface of a line portion 31a of the pattern 31 where the absorption layer 30 remains with that near a surface of a space portion 21a where the capping layer 21 is exposed. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
