发明名称 REACTION FURNACE FOR MANUFACTURING POLYCRYSTALLINE SILICON, AND METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a reaction furnace for manufacturing a polycrystalline silicon by a zinc reducing method, wherein even if different materials are used for a side wall and the lid of the furnace, these are not broken due to the difference in thermal expansion amount on heating, and to provide a reaction furnace for manufacturing a polycrystalline silicon by a zinc reducing method, wherein the furnace has a seal structure having a high sealability between a side wall and a lid of the furnace.SOLUTION: The reaction furnace for manufacturing a polycrystalline silicon is a reaction furnace to produce a polycrystalline silicon by reacting silicon tetrachloride and zinc, and includes a cylindrical side wall of the reaction furnace having a flange part at the end, a lid to close the end of the side wall, a seal member interposed between the flange part of the side wall and the lid, a heater to heat the side wall, a thermal insulating material installed in the vicinity of the end in the side wall, and a supply pipe for an inert gas installed on the lid, wherein a portion where there is installed no heater is provided in the vicinity of the end of the side wall, and the thermal insulating material is provided nearer the end than a portion where there is installed the heater.
申请公布号 JP2011207636(A) 申请公布日期 2011.10.20
申请号 JP20100074599 申请日期 2010.03.29
申请人 COSMO OIL CO LTD 发明人 MIZOGUCHI TAKASHI;SAITO KINJIRO;SHIMAMURA MASAKI
分类号 C01B33/033;C01B33/02 主分类号 C01B33/033
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