| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a unit cell that does not require processing of a ring shape the control of which is very difficult, and is small in characteristic variation caused by processing variation in FinFET structure in which the minimum processing dimension corresponds to the fin width. <P>SOLUTION: A unit cell has gate electrodes G having an open-loop structure formed on a semiconductor substrate 1, a fin-shaped drain region 2 formed in a region inside the gate electrodes G and a fin-shaped source region 3 formed in a region outside the gate electrodes G. A drain contact 2a is formed on the drain region 2, and a source contact 3a is formed on the source region 3. <P>COPYRIGHT: (C)2012,JPO&INPIT |
