| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion device capable of suppressing a light degradation rate. <P>SOLUTION: A photoelectric conversion device comprises a substrate and a pin-type photoelectric conversion layer provided on a surface of the substrate. The pin-type photoelectric conversion layer includes a first pin-type photoelectric conversion layer in which a p-type semiconductor layer, an i-type semiconductor layer of an amorphous semiconductor layer, and an n-type semiconductor layer are stacked. The first pin-type photoelectric conversion layer comprises a first part located on a part of the surface of the substrate and a second part located on another part of the surface of the substrate. The concentration of at least one impurity element selected form oxygen, nitrogen, and carbon in the first part is higher than the concentration of the impurity element in the second part. The thickness of the first part is thinner than that of the second part. <P>COPYRIGHT: (C)2012,JPO&INPIT |
