发明名称 |
SUBSTRATE PROCESSING APPARATUS |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus in which a product wafer is mounted adjacently to a dummy wafer on a board and that improves the uniformity of the film thickness between surfaces of the product wafer. <P>SOLUTION: A plurality of first substrates (product wafers) having an uneven surface are laminated and held on a board while a second substrate (dummy wafer) having a surface having less unevenness than that of the first substrate is held on the upper end or the lower end of the first substrate. A processing gas is supplied toward the first substrate and the second substrate while an inert gas is supplied toward the second substrate in the processing of the first substrate and the second substrate in a processing chamber. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2011249407(A) |
申请公布日期 |
2011.12.08 |
申请号 |
JP20100118417 |
申请日期 |
2010.05.24 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
TAKADA MASATOSHI;SASAKI TAKASHI |
分类号 |
H01L21/31;C23C16/455;H01L21/205 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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