SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To improve breakdown voltage characteristics of a semiconductor device.

SOLUTION: A semiconductor device 100 comprises a termination area 107 surrounding a cell area 105. In the cell area 105, main trenches 113 are formed. In the termination area 107, termination trenches 161 to 163 that surround the cell area 105 are formed. The termination trench 161 is located at the innermost peripheral side of the termination trenches. A body region 141 is laminated on a surface of a drift region 112. The main trenches 113 reach the drift region 112, and have a gate electrode 122 formed therein. The termination trench 161 reaches the drift region 112. The sidewall and the bottom surface of the termination trench 161 are coated with an oxide film 171. The surface of the oxide film 171 coating the bottom surface of the termination trench 161 is coated with a buried electrode 124. A gate voltage is applied to the buried electrode 124.

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