发明名称 HYBRID SILICON WAFER AND METHOD OF PRODUCING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a hybrid silicon wafer comprising the functions of both a polycrystalline silicon wafer and a single-crystal wafer, or two or more polycrystalline silicon wafers having different functions. <P>SOLUTION: The hybrid silicon wafer is made of a wafer comprised primarily of two or more types of concentric single-crystal silicon or polycrystalline silicon prepared by mutually integrating one in a molten state and the other in a solid state, and having specific resistances that differ by two orders of magnitude or more. The hybrid silicon wafer is produced as follows: high specific resistance silicon or an ingot 1 comprised primarily of silicon is disposed at a central position or a decentered position in a crucible 2, a nugget 3 or powdered silicon having a specific resistance that is lower by two orders of magnitude or more than the ingot is filled into a void part around the ingot in the crucible, the nugget or powdered silicon is selectively melted and integrated with the ingot to form a complex, and a wafer shape is cut out therefrom. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012017221(A) 申请公布日期 2012.01.26
申请号 JP20100155580 申请日期 2010.07.08
申请人 JX NIPPON MINING & METALS CORP 发明人 SUZUKI SATORU;TAKAMURA HIROSHI
分类号 C01B33/02;H01L21/208 主分类号 C01B33/02
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