发明名称 |
SRAM cell configuration and method for its fabrication |
摘要 |
The SRAM cell configuration has at least six transistors in each memory cell. Four of the transistors form a flip-flop and they are arranged at the corners of a quadrilateral. The flip-flop is driven by two of the transistors, which are disposed so as to adjoin diagonally opposite corners of the quadrilateral and outside the quadrilateral. Adjacent memory cells along a word line can be arranged in such a way that a first bit line and a second bit line of the adjacent memory cells coincide. The transistors are preferably vertical and are arranged at semiconductor structures (St1, St2, St3, St4, St5, St6) produced from a layer sequence. Two of the transistors having n-doped channel regions are preferably formed in each case on two semiconductor structures.
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申请公布号 |
US6038164(A) |
申请公布日期 |
2000.03.14 |
申请号 |
US19980200071 |
申请日期 |
1998.11.25 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
SCHULZ, THOMAS;AEUGLE, THOMAS;ROESNER, WOLFGANG;RISCH, LOTHAR |
分类号 |
H01L21/8244;H01L27/11;(IPC1-7):G11C11/00 |
主分类号 |
H01L21/8244 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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