| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide improved techniques for metallic etching and stripping remaining photoresist and residual sidewall passivation. <P>SOLUTION: There is provided a method for performing a metallic etch, etch mask stripping, and removal of residual sidewall passivation in a single etch chamber. A wafer is placed in an etch chamber. A metal etch is performed on the wafer. A stripping gas, such as a mixture of oxygen and argon is provided to the etch chamber and is excited to form an oxygen plasma. The oxygen plasma strips the etch mask from the wafer and removes residual sidewall passivation. The oxygen plasma also cleans the etch chamber. <P>COPYRIGHT: (C)2012,JPO&INPIT |
