| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a single-crystal sapphire substrate with few metal impurities and crystal defects (air bubbles), and a single-crystal sapphire substrate. <P>SOLUTION: The method for producing a sapphire ingot includes: a heating step (S101) in the solid phase in which solid aluminum oxide (alumina) filled in a crucible in a heating furnace is heated and held at a temperature less than the melting point (2,050°C); a melting step (S102) in which the aluminum oxide in the crucible is melted; a heating step (S103) in the liquid phase in which the aluminum oxide is heated and held at a temperature higher than the melting point thereof; a shoulder-part formation step (S105) in which a seed crystal is pulled up while being rotated to form a shoulder part beneath the seed crystal; and a straight-part formation step (S106) in which the shoulder-part is pulled up while being rotated via the seed crystal while the lower end part of the shoulder-part is kept in contact with the alumina melt to form a straight part beneath the shoulder part. <P>COPYRIGHT: (C)2012,JPO&INPIT |
