发明名称 |
SEMICONDUCTOR FILM, SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME |
摘要 |
<p>PURPOSE: A semiconductor film, a semiconductor device, a semiconductor apparatus, and a manufacturing method thereof are provided to stabilize electrical characteristics by forming a seed crystal layer and an oxide semiconductor film. CONSTITUTION: A first semiconductor layer contacts with an insulating surface(102). The first semiconductor layer comprises a first crystal having a first crystal structure. A second semiconductor layer contacts with the first semiconductor layer. The semiconductor layer comprises a second crystal having a second crystal structure. The first semiconductor layer has crystalline higher than the second semiconductor layer. A first crystal structure is a wurtzite type structure. A second crystalline structure has a hetero-structure.</p> |
申请公布号 |
KR20120059393(A) |
申请公布日期 |
2012.06.08 |
申请号 |
KR20110124960 |
申请日期 |
2011.11.28 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;TAKAHASHI MASAHIRO;MARUYAMA TETSUNORI |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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