发明名称 SEMICONDUCTOR FILM, SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME
摘要 <p>PURPOSE: A semiconductor film, a semiconductor device, a semiconductor apparatus, and a manufacturing method thereof are provided to stabilize electrical characteristics by forming a seed crystal layer and an oxide semiconductor film. CONSTITUTION: A first semiconductor layer contacts with an insulating surface(102). The first semiconductor layer comprises a first crystal having a first crystal structure. A second semiconductor layer contacts with the first semiconductor layer. The semiconductor layer comprises a second crystal having a second crystal structure. The first semiconductor layer has crystalline higher than the second semiconductor layer. A first crystal structure is a wurtzite type structure. A second crystalline structure has a hetero-structure.</p>
申请公布号 KR20120059393(A) 申请公布日期 2012.06.08
申请号 KR20110124960 申请日期 2011.11.28
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;TAKAHASHI MASAHIRO;MARUYAMA TETSUNORI
分类号 H01L29/786 主分类号 H01L29/786
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