| 摘要 |
<p>The photovoltaic cell comprises a transparent glass substrate (10) protecting a stack of layers, a film (5) having a cadmium based material and photovoltaic properties, and two layers (3, 6) forming electrodes on either side of the photovoltaic layer, where a lower electrode layer is made of a transparent conductive oxide. The cell comprises a layer consisting of gallium nitride between the lower electrode layer and the film, which is partially substituted by aluminum, and a buffer layer between the gallium nitride layer and the film. The photovoltaic cell comprises a transparent glass substrate (10) protecting a stack of layers, a film (5) having a cadmium based material and photovoltaic properties, and two layers (3, 6) forming electrodes on either side of the photovoltaic layer, where a lower electrode layer is made of a transparent conductive oxide. The cell comprises a layer consisting of gallium nitride between the lower electrode layer and the film, which is partially substituted by aluminum, and a buffer layer between the gallium nitride layer and the film. The gallium nitride layer has a thickness of less than 12 nm. The buffer layer has a thickness of 150-200 nm. A dielectric material layer is produced between the substrate and the lower electrode layer, and comprises a barrier material formed from a glass substrate and barrier to alkali material during tempering or annealing.</p> |
