PROCEDE DE FABRICATION D'UN DISPOSITIF MICROELECTRONIQUE A MEMOIRE PROGRAMMABLE,申请号FR20100054391-传众专利搜索

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发明名称	PROCEDE DE FABRICATION D'UN DISPOSITIF MICROELECTRONIQUE A MEMOIRE PROGRAMMABLE
摘要
申请公布号	FR2961018(B1)	申请公布日期	2012.07.20
申请号	FR20100054391	申请日期	2010.06.04
申请人	ALTIS SEMICONDUCTOR	发明人	DAHMANI FAIZ
分类号	H01L27/10;H01L21/77	主分类号	H01L27/10
代理机构		代理人
主权项
地址

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