发明名称 |
BISMUTH TELLURIDE NANOWIRES THROUGH ANNEALING PROCESS, AND METHOD OF DEVELOPMENT FOR THE ENHANCEMENT OF THERMOELECTRIC EFFICIENCY OF THE SAME |
摘要 |
PURPOSE: A supporter and a method of improving thermoelectric efficiency are provided to increase thermoelectric efficiency of a thermoelectric module consisting of a nano wire structure by improving conductivity through the crystal structure improvement of the nano wire structure. CONSTITUTION: A bismuth telluride nano wire is formed inside a porous supporter. The bismuth telluride nano wire is made of a monocrystal. The bismuth telluride nanowire is heat-treated in an inactive atmosphere. A Seeback coefficient of the bismuth telluride nano wire satisfies 57μV/K-62μV/K. The inactive atmosphere is formed with one gas selected from helium, neon, argon, krypton, xenon, or radon. |
申请公布号 |
KR20120086499(A) |
申请公布日期 |
2012.08.03 |
申请号 |
KR20110007767 |
申请日期 |
2011.01.26 |
申请人 |
LG INNOTEK CO., LTD. |
发明人 |
LEE, JONG MIN;LEE, JAE YOUNG;ANDREAS BERGER;LAURENT CAGNON;ULRICH GOSELE;KORNELIUS NIELSCH |
分类号 |
H01L35/14;B82B1/00;H01L35/18 |
主分类号 |
H01L35/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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