发明名称 BISMUTH TELLURIDE NANOWIRES THROUGH ANNEALING PROCESS, AND METHOD OF DEVELOPMENT FOR THE ENHANCEMENT OF THERMOELECTRIC EFFICIENCY OF THE SAME
摘要 PURPOSE: A supporter and a method of improving thermoelectric efficiency are provided to increase thermoelectric efficiency of a thermoelectric module consisting of a nano wire structure by improving conductivity through the crystal structure improvement of the nano wire structure. CONSTITUTION: A bismuth telluride nano wire is formed inside a porous supporter. The bismuth telluride nano wire is made of a monocrystal. The bismuth telluride nanowire is heat-treated in an inactive atmosphere. A Seeback coefficient of the bismuth telluride nano wire satisfies 57μV/K-62μV/K. The inactive atmosphere is formed with one gas selected from helium, neon, argon, krypton, xenon, or radon.
申请公布号 KR20120086499(A) 申请公布日期 2012.08.03
申请号 KR20110007767 申请日期 2011.01.26
申请人 LG INNOTEK CO., LTD. 发明人 LEE, JONG MIN;LEE, JAE YOUNG;ANDREAS BERGER;LAURENT CAGNON;ULRICH GOSELE;KORNELIUS NIELSCH
分类号 H01L35/14;B82B1/00;H01L35/18 主分类号 H01L35/14
代理机构 代理人
主权项
地址