| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element that can achieve high luminance and to provide a method of manufacturing the same. <P>SOLUTION: A semiconductor light-emitting element comprises: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer; a first electrode layer electrically connected to the first semiconductor layer; and a second electrode layer electrically connected to the second semiconductor layer. The second electrode layer includes a metal portion that has a thickness ranging from 10 nm or more to 300 nm or less along the direction toward the second semiconductor layer from the first semiconductor layer, and a plurality of openings that penetrate through the metal portion along the direction and have a circle-equivalent diameter, as viewed from the direction, ranging from 10 nm or more to 5 μm or less. The second semiconductor layer is Schottky coupled to the metal portion. <P>COPYRIGHT: (C)2012,JPO&INPIT |
