| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate for growing a group III-V light-emitting device without deteriorating characteristics and reliability. <P>SOLUTION: A substrate including a host and a seed layer bonded to the host is prepared, subsequently, a semiconductor structure including a light-emitting layer arranged between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be made to be thinner than a critical thickness for relaxation of distortion in the semiconductor structure so that distortion in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer, i.e. an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by removing the bonding layer by etching. <P>COPYRIGHT: (C)2013,JPO&INPIT |
