| 摘要 |
1356157 Semi-conductor devices GENERAL ELECTRIC CO 24 May 1971 [22 May 1970] 16756/71 Heading H1K A semi-conductor device comprises a wafer having ohmic contacts associated with opposite major faces, an insulating preform peripherally encompassing the wafer, the preform and one contact having spaced approximately conforming surfaces and a layer of polymeric passivant interposed between and bonded to the peripheral edge of the wafer and the approximately conforming surfaces of the contact and preform. In a first embodiment, Fig. 1 (not shown), a diode is provided with contact layers by sputtering, vapour plating or electroless plating and coextensive electrodes are secured. A cylindrical preform of glass or glazed ceramic is fitted round the assembly and secured by a layer of polymeric passivant, e.g. a silicone resin or rubber, epoxy resin, polyimide or fluorocarbon polymer. The electrodes may be of Cu soft soldered or of W or Mo hard soldered to the diode which may be of Ge or Si. In a second embodiment, Fig. 2, a diode is provided with W or Mo contact plates 216 and terminal members 212, 214 which have pedestals which contact plates 216. A layer of Au or other malleable metal can be inserted between the contact plates and the pedestals. Each contact plate may be bonded to the wafer or pedestal but not both, or may not be bonded. A preform 224 surrounds the wafer, contact plates, and pedestals, the assembly is inserted in a mould under pressure and polymeric passivant is injected into the space between the preform and the other components through a sprue 226 to form the bonding layer 222. In a further embodiment, Fig. 3 (not shown), an SCR having a double bevelled edge is arranged between two main terminal members, the member contacting the larger face extending past the edge of the wafer, and a preform is fitted round the wafer and smaller terminal and bonded by a layer of polymeric passivant. The gate contact extends through an aperture in one main electrode and is insulated by polymeric passivant or by a small preform secured to the main electrode and wafer by a layer or polymeric passivant. The semi-conductor diode may also be a Schottky diode or a transistor. |
