| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting element that emits light with high efficiency and is suitably designed to be thin. <P>SOLUTION: A light emitting element 1 comprises an ultraviolet light radiation portion 15 and a phosphor layer 21. An ultraviolet light emission layer 11 formed of a semiconductor material containing ZnO as a base material and added with Ga and P and a p-type semiconductor layer 12 containing ZnO as a base material are subjected to pn-junction, and a first electrode 13 is connected to the ultraviolet light emission layer 11 while a second electrode 14 is connected to the p-type semiconductor layer 12. A voltage is applied between the first electrode 13 and the second electrode, whereby ultraviolet light having a peak wavelength of 400 nm or less is emitted from the ultraviolet light emission layer 11. The phosphor layer 21 absorbs ultraviolet light emitted from the ultraviolet light radiation portion 15 and converts the ultraviolet light to visible light. The visible light is transmitted through a substrate 22 and emitted to the outside. <P>COPYRIGHT: (C)2013,JPO&INPIT |
