| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase the speed of reading data. <P>SOLUTION: A semiconductor storage device 1 comprises: a memory cell array 1a; a column line 1b; first and second data lines 1d and 1e; a switch 1c which, when data is read, selects the first or second data line 1d or 1e and connects it to the column line 1b and which, when data is written, connects the first and second data lines 1d and 1e to the column line 1b; a read circuit 1f which is connected to the first and second data lines 1d and 1e; and a write circuit 1g which is connected to the first and second data lines 1d and 1e. <P>COPYRIGHT: (C)2013,JPO&INPIT |
