发明名称 |
FABRICATING METHOD OF SEMICONDUCTOR PACKAGE STRUCTURE |
摘要 |
A fabricating method of a semiconductor package structure is provided. A dielectric layer having a first surface and a second surface is provided. A patterned metal layer has been formed on the first surface of the dielectric layer. An opening going through the first and the second surfaces is formed. A carrier having a third surface and a fourth surface is formed at the second surface. A portion of the third surface is exposed by the opening of the dielectric layer. A semiconductor die having a joining surface and a side-surface is joined in the opening. At least a through hole going through the third and the fourth surfaces is formed. A metal layer having at least a heat conductive post extending from the fourth surface of the carrier to the through hole and disposed in the through hole and a containing cavity is formed on the fourth surface.
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申请公布号 |
US2013011971(A1) |
申请公布日期 |
2013.01.10 |
申请号 |
US201213590847 |
申请日期 |
2012.08.21 |
申请人 |
SUBTRON TECHNOLOGY CO., LTD.;TSENG TZYY-JANG;WANG CHIN-SHENG;CHUANG CHIH-HONG |
发明人 |
TSENG TZYY-JANG;WANG CHIN-SHENG;CHUANG CHIH-HONG |
分类号 |
H01L21/50 |
主分类号 |
H01L21/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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