发明名称 TRANSISTORS WITH IMMERSED CONTACTS
摘要 Embodiments of a semiconductor structure include a first current electrode region, a second current electrode region, and a channel region. The channel region is located between the first current electrode region and the second current electrode region, and the channel region is located in a fin structure of the semiconductor structure. A carrier transport in the channel region is generally in a horizontal direction between the first current electrode region and the second current electrode region. A contact extends into the first current electrode region and is electrically coupled to the first current electrode region.
申请公布号 US2013009222(A1) 申请公布日期 2013.01.10
申请号 US201213613614 申请日期 2012.09.13
申请人 FREESCALE SEMICONDUCTOR, INC.;ORLOWSKI MARIUS K.;BURNETT JAMES D. 发明人 ORLOWSKI MARIUS K.;BURNETT JAMES D.
分类号 H01L29/78 主分类号 H01L29/78
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