| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which capacitance of a capacitor element can be increased while suppressing an increase in occupied area on a semiconductor layer. <P>SOLUTION: The semiconductor device includes: an n-type semiconductor layer 3 having a plurality of active regions A separated by an element separation groove 2; a capacitance film 15 having a side wall covering part 17 covering a side wall 2b of the element separation groove 2; and an electrode film 18 laminated on the capacitance film 15. A capacitor C is formed by the n-type semiconductor layer 3, the capacitance film 15, and the electrode film 18. <P>COPYRIGHT: (C)2013,JPO&INPIT |
