| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming film in a plasma CVD method which produces a silicon film having high crystallinity and low defect density, and achieves a high film forming speed. <P>SOLUTION: A plasma generation space is formed at an upper part of a processing container 1 by disposing a coiled antenna 52 on the upper surface of the processing container 1, and by applying high-frequency power to the antenna 52. Helium active species are generated by supplying helium gas from a first gas supply part into the plasma generation space. On the other hand, monosilane gas is discharged upward from a second gas supply part 4 that is below the first gas supply part. Thus, the helium active species and the monosilane gas are mixed together, and the monosilane is plasmatized. A film forming processing is performed by supplying a mixed gas containing the plasmatized monosilane to a substrate S. The film forming processing uses no hydrogen gas. <P>COPYRIGHT: (C)2013,JPO&INPIT |
