发明名称 |
Isolation in CMOSFET devices utilizing buried air bags |
摘要 |
A semiconductor device structure having an isolation region and method of manufacturing the same are provided. The semiconductor device structure includes a silicon-on-insulator (SOI) substrate. A plurality of gates is formed on the SOI substrate. The semiconductor device structure further includes trenches having sidewalls, formed between each of the plurality of gates. The semiconductor device structure further includes an epitaxial lateral growth layer formed in the trenches. The epitaxial lateral growth layer is grown laterally from the opposing sidewalls of the trenches, so that the epitaxial lateral growth layer encloses a portion of the trenches extended into the SOI substrate. The epitaxial lateral growth layer is formed in such way that it includes an air gap region overlying a buried dielectric layer of the SOI substrate.
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申请公布号 |
US8395217(B1) |
申请公布日期 |
2013.03.12 |
申请号 |
US201113283031 |
申请日期 |
2011.10.27 |
申请人 |
CHENG KANGGUO;ERVIN JOSEPH;JOHNSON JEFFREY B.;KULKARNI PRANITA;MCSTAY KEVIN;PARRIES PAUL C.;PEI CHENGWEN;WANG GENG;ZHANG YANLI;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;ERVIN JOSEPH;JOHNSON JEFFREY B.;KULKARNI PRANITA;MCSTAY KEVIN;PARRIES PAUL C.;PEI CHENGWEN;WANG GENG;ZHANG YANLI |
分类号 |
H01L27/12;H01L21/84 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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地址 |
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