| 摘要 |
<p>[Problems to be Solved] To provide a sputtering target that is capable of forming a Cu-Ga film to which Na is favorably added by a sputtering method, and a method for producing the same. [Means to Solve the Problems] The sputtering target is provided wherein 20 to 40 at% of Ga, 0.05 to 2 at% of Na, and 0.025 to 1.0 at% of S are contained and a remaining portion has a component composition consisting of Cu and unavoidable impurities. Also, a method for producing the sputtering target includes the step of hot pressing a mixed powder of Na 2 S powder and Cu-Ga alloy powder or a mixed powder of Na 2 S powder, Cu-Ga alloy powder, and pure Cu powder in a vacuum atmosphere or an inert gas atmosphere or sintering a mixed powder of Na 2 S powder and Cu-Ga alloy powder or a mixed powder of Na 2 S powder, Cu-Ga alloy powder, and pure Cu powder by hot isostatic pressing.</p> |
