| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor optical element capable of reducing formation failure of a diffraction grating pattern due to a residue. <P>SOLUTION: A diffraction grating area provided with a concave and convex part 46b is surrounded by a separation area, and therefore, resin on the diffraction grating area is thicker than a flattening resin layer 48 in the separation area. There is a need for setting a condition of resin etching so that large pattern dependency is not indicated due to the flattening resin layer 48 with uneven thickness. In this case, the resin residue is easily generated due to the uneven thickness. When a flow rate ratio R (a flow rate of fluorine-based carbon)/(a flow rate of oxygen) is in a range of 1 or less in removing the resin residue, an etching rate of SiN is small. When the flow rate ratio R is in a range of the flow rate ratio larger than 1, the etching rate of SiN is large. When the flow rate ratio R is in a range of 1 or less, a shape change of an insulation film mask in residue processing is small. <P>COPYRIGHT: (C)2013,JPO&INPIT |
