| 摘要 |
Disclosed herewith is an improvement of the conventional process for the vapor growth of a thin film, such as the films of SiO2, Si3N4, Al2O3 and polycrystalline Si, on a plurality of wafers, such as wafers of a semiconductor, under a reduced pressure. This improved process allows the growing of a uniformly thin film on each piece of wafer. According to the present invention, the location of the wafers is changed in accordance with a specific pressure within the reaction tube. |
