| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an operation method of a memory device which may issue a command according to a level of a control signal input through a control pin, and an apparatus performing the method. <P>SOLUTION: According to combination of 'H' and 'L' of ODT inputs, input at a plurality of clock cycles, memory operation control is performed such as a resistance change of a termination resistor by ODT controller, turn-off or turn-on of ODT circuit, or memory refresh operation required even in power-down state. <P>COPYRIGHT: (C)2013,JPO&INPIT |
