| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can inhibit increase in on-resistance of the semiconductor device while maintaining a field relaxation effect by a field buffer layer. <P>SOLUTION: A semiconductor device having a trench gate electrode 13 comprises: a body layer 21 provided in contact with a side wall of the trench gate electrode 13; and a field buffer layer 24 provided in contact with the body layer 21. In this embodiment, a distance between the trench gate electrode 13 and the field buffer layer 24 in a region where a channel formation region is not provided between the trench gate electrode 13 and the field buffer layer 24 is shorter than the distance in a region where a channel formation region is provided between the trench gate electrode 13 and the field buffer layer 24. <P>COPYRIGHT: (C)2013,JPO&INPIT |
