发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 A method of manufacturing a semiconductor device which solves a problem with a burn-in process where current and voltage are applied to finished semiconductor devices at high-temperature. The method uses an organic multilayer wiring substrate for a burn-in board in which power supply/grounding wiring is formed with microscopic openings formed at least almost all over the areas around sockets over the front or back surface of the substrate. For increasing the supply voltage and reference voltage for the burn-in board and other purposes, whenever possible, signal wires are disposed in inner wiring layers of the board. The related-art burn-in board which has a solid or blanket-type conductor pattern in an outermost layer as wiring for supply or reference voltage may cause an insulating protective film over the metal wiring to peel due to weak adhesion between the wiring and film when thermal cycles are repeated. The method solves the problem.
申请公布号 US2013102093(A1) 申请公布日期 2013.04.25
申请号 US201213611801 申请日期 2012.09.12
申请人 OGAWA YASUHIRO;RENESAS ELECTRONICS CORPORATION 发明人 OGAWA YASUHIRO
分类号 H01L21/50 主分类号 H01L21/50
代理机构 代理人
主权项
地址