| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of microfabricating the semiconductor device while suppressing an increase in the number of lithography steps.SOLUTION: A method for manufacturing a semiconductor device according to an embodiment comprises the steps of: forming a laminated film including a conductive film 13 and a pattern film formed to have a prescribed pattern above the conductive film 13; forming a first side wall film pattern 25 in which a shape of a side surface of the prescribed pattern is reflected; forming a second side wall film pattern in which a shape of a side surface of the first side wall film pattern 25 is reflected; and patterning the conductive film 13 using the second side wall film pattern. The prescribed pattern includes a salient or a slit 16. The step of forming the second side wall film pattern forms the second side wall film pattern so as to include a protrusive periphery formed on a side surface of a protrusion 26 formed corresponding to the salient or the slit 16, and positions a contact to the conductive film 13 at the portion corresponding to the protrusive periphery in the conductive film 13. |
