| 摘要 |
PROBLEM TO BE SOLVED: To disclose a magnetron sputter reactor 410 and its method of use, in which SIP (self ionized plasma) sputtering and ICP (inductively-coupled plasma) sputtering are promoted.SOLUTION: In another chamber 412, an array of auxiliary magnets positioned along sidewalls 414 of a magnetron sputter reactor on a side towards a wafer from a target is disclosed. A magnetron 436 preferably is a small one having a stronger outer pole 442 of a first polarity surrounding a weaker inner pole 440 of a second polarity all on a yoke 444 and rotates about an axis 438 of the chamber using rotation means 446, 448, 450. The auxiliary magnets 462 preferably have the first polarity to draw an unbalanced magnetic field 460 towards the wafer 424, which is on a pedestal 422 supplied with power 454. Argon 426 is supplied through a valve 428. The target 416 is supplied with power 434. |
