| 摘要 |
ABSTRACT - 594660 The disclosure relates to a middle infra-red laser, the improvement comprising, an electrically excitable doped quantum confined host material selected from crystals doped with transition metal ions, structured to have characteristic spatial dimension of the confinement tuned to enable overlap of the discrete levels of host and transition metal ions and efficient energy transfer from separated host carriers to the transition metal ions and with strong luminescence in a widely tunable mid-IR range, wherein said doped quantum confined host material is fabricated by the process of: (a) growing bulk material selected from polycrystalline ZnSe or ZnS; (b) doping said bulk material with a selected transitional metal ion; and (c) forming doped quantum confined host material from said doped polycrystalline material, wherein said doped quantum confined host material has the formula: TM:MeZ and/or MeX2Z4, wherein Me is selected from the group consisting of Zn, Cd, Ca, Mg, Sr, Ba, Hg, Pb, Cu, Al, Ga, In; Z is selected from the group consisting of S, Se, Te, O, N, P, As, Sb and their mixtures; X being selected from the group consisting of Ga, In, and Al; and TM is selected from the group consisting from V, Cr, Mn, Fe, Co, and Ni.
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