| 摘要 |
PROBLEM TO BE SOLVED: To allow the stable application of a DC voltage inside a process chamber over a long period of time by suppressing the deposition of a reaction product of plasma processing to a ground electrode provided in the process chamber.SOLUTION: A plasma processing apparatus 1 forms plasma of a process gas by applying a high-frequency electric power between an upper electrode 42 and a lower electrode 13 provided in a process chamber 11, and then processes an object to be handled by use of the plasma. The plasma processing apparatus comprises: a DC power source 61 for applying a DC voltage to the upper electrode 42; a ground electrode 100 connected with the DC power source 61; and an annular shield member 110 provided outside the ground electrode 100. The ground electrode 100 has a groove part 101 formed in its outer peripheral part so as to be downward concave. The shield member 110 is formed so that its upper end is located above the upper end of the ground electrode. The shield member 110 has a protrusion formed on its part located above the ground electrode 100 and protruding toward the center of the ground electrode 100. |
