| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of highly accurately controlling a thickness of a heat radiating resin.SOLUTION: A core substrate 11 comprises: a first insulating layer; a plurality of first through holes 13 penetrating the first insulating layer in a thickness direction; and a plurality of first wiring layers 15 and 16 formed on an upper and a lower surface of the first insulating layer and connected via the plurality of first through holes. A build-up substrate 12 comprises: an insulating layer; a plurality of second through holes 19 penetrating the insulating layer in a thickness direction; and a plurality of wiring layers 18 formed on a surface of the insulating layer and in the plurality of second through holes. Each of the first insulating layer of the core substrate and the insulating layer of the build-up substrate includes a resin layer and a glass cloth. The glass cloth included in the build-up substrate is formed thinner than the glass cloth included in the core substrate. |
