发明名称
摘要 <p>As an electrode area of a plasma CVD apparatus is enlarged, influence of the surface standing wave remarkably appears, and there is a problem in that in-plane uniformity of quality and a thickness of a thin film formed over a glass substrate is degraded. Two or more high-frequency electric powers with different frequencies are supplied to an electrode for producing glow discharge plasma in a reaction chamber. With glow discharge plasma produced by supplying the high-frequency electric powers with different frequencies, a semiconductor thin film or an insulating thin film is formed. High-frequency electric powers with different frequencies (different wavelengths), which are superimposed on each other, are applied to an electrode in a plasma CVD apparatus, so that increase in plasma density and uniformity for preventing effect of surface standing wave of plasma are attained.</p>
申请公布号 JP5393853(B2) 申请公布日期 2014.01.22
申请号 JP20120166463 申请日期 2012.07.27
申请人 发明人
分类号 H01L21/205;C23C16/509;H01L21/31;H05H1/46 主分类号 H01L21/205
代理机构 代理人
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