| 摘要 |
A packaged power field effect transistor device includes a power field effect transistor die, a DBA substrate, a clip, a wire bond, leads, and an amount of plastic encapsulant. The top of the DBA has a plurality of metal plate islands. A sintered silver feature is disposed on one of the islands. A silvered backside of the die is directly bonded to the sintered silver structure of the DBA. The upper surface of the die includes a first aluminum pad (a source pad) and a second aluminum pad (a gate pad). A sintered silver structure is disposed on the first aluminum pad, but there is no sintered silver structure disposed on the second aluminum pad. A high current clip is attached via soft solder to the sintered silver structure on the first aluminum pad (the source pad). A bond wire is ultrasonically welded to the second aluminum pad (gate pad). |
