Dual gate electronic memory cell and device with dual gate electronic memory cells

摘要

A memory cell including: an active area having a channel provided between a source and a drain, a first gate provided on a first part of the channel, a portion of a first lateral spacer provided against a lateral flank of the first gate, a part of which forms a second gate provided on a second part of the channel, one of two gates forming a storing gate, the memory cell further including a portion of a second lateral spacer provided against a lateral flank of a block provided on the semi-conductor layer, the second lateral spacer being in contact with the first lateral spacer, the first and second lateral spacers being composed of similar materials, said portion of the second lateral spacer forming a part of an electrical contact pad electrically connected to the second gate.