发明名称 |
Method of forming micropattern, method of forming damascene metallization, and semiconductor device and semiconductor memory device fabricated using the same |
摘要 |
According to example embodiments, a method of forming micropatterns includes forming dummy patterns having first widths on a dummy region of a substrate, and forming cell patterns having second widths on an active line region of the substrate. The active line region may be adjacent to the dummy region and the second widths may be less than the first widths. The method may further include forming damascene metallization by forming a seed layer on the active line region and the dummy region, forming a conductive material layer on a whole surface of the substrate, and planarizing the conductive material layer to form metal lines. |
申请公布号 |
US8709937(B2) |
申请公布日期 |
2014.04.29 |
申请号 |
US201213533653 |
申请日期 |
2012.06.26 |
申请人 |
PARK IN-SUN;CHOI GIL-HEYUN;PARK JI-SOON;LEE JONG-MYEONG;HONG JONG-WON;KIM HEI-SEUNG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK IN-SUN;CHOI GIL-HEYUN;PARK JI-SOON;LEE JONG-MYEONG;HONG JONG-WON;KIM HEI-SEUNG |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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