| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition system in which an evaporation rate of a material and plasma density are set freely, gas barrier properties can be set freely independently of a deposition rate and a gas barrier laminate excellent in oxygen barrier properties and water vapor barrier properties is produced. SOLUTION: The thin film deposition apparatus includes: a conveyance means for conveying a film base material by a roll-to-roll method; and a vapor deposition means for depositing the vapor of the material to be deposited onto the film base material. The vapor deposition means has a means for evaporating the material to be deposited and a means for activating the evaporated material to be deposited by plasma. COPYRIGHT: (C)2011,JPO&INPIT |
