NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element having a structure capable of reducing fluctuation in forward voltage Vf associated with energization.SOLUTION: In a nitride semiconductor light-emitting element, an electron from an n-type clad layer 23 is supplied to an active layer 15; when carrier overflow occurs, the electron overflows from the active layer 15; the electron propagates a second InGaN layer 25a of a center semiconductor region 19 to reach a second heterointerface HJ2 where misfit dislocation is generated in a second group III nitride semiconductor region 17; energy generated by non-radiative recombination has a magnitude capable of creating reaction for causing recombination of an activated p-type dopant and residual hydrogen; and the free residual hydrogen binds to the already activated p-type dopant to behave as an acceptor killer. However, the overflow electron which reaches the second heterointerface HJ2 disappears by non-radiative recombination through misfit dislocation.