METHOD OF MAKING INTERCONNECT STRUCTURE

摘要

A method of making a semiconductor device including forming a first adhesion layer over a substrate. The method further includes forming a second adhesion layer over the first adhesion layer, where the second adhesion layer is formed using an inert gas with a first flow rate under a first RF power. Additionally, the method includes forming a low-k dielectric layer over the second adhesion layer, where the low-k dielectric layer is formed using the inert gas with a second flow rate under a second RF power under at least one of the following two conditions: 1) the second flow rate is different from the first flow rate; or 2) the second RF power is different from the first RF power. Furthermore, the method includes forming an opening in the dielectric layer, the second adhesion layer, and the first adhesion layer. Additionally, the method includes forming a conductor in the opening.

主权项

1. A method of making a semiconductor device, the method comprising:
forming a first adhesion layer over a substrate; forming a second adhesion layer over the first adhesion layer, wherein the second adhesion layer is formed using an inert gas with a first flow rate under a first RF power; forming a low-k dielectric layer over the second adhesion layer, wherein the low-k dielectric layer is formed using the inert gas with a second flow rate under a second RF power under at least one of the following two conditions: 1) the second flow rate is different from the first flow rate; or 2) the second RF power is different from the first RF power; forming an opening in the dielectric layer, the second adhesion layer, and the first adhesion layer; and forming a conductor in the opening.