| 发明名称 |
ELECTRONIC DEVICES HAVING SEMICONDUCTOR MEMORY UNITS AND METHOD OF FABRICATING THE SAME |
| 摘要 |
Electronic devices have a semiconductor memory unit including a magnetization compensation layer in a contact plug. One implementation of the semiconductor memory unit includes a variable resistance element having a stacked structure of a first magnetic layer, a tunnel barrier layer, and a second magnetic layer, and a contact plug arranged in at least one side of the variable resistance element and comprising a magnetization compensation layer. Another implementation includes a variable resistance element having a stacked structure of a first magnetic layer having a variable magnetization, a tunnel barrier layer, and a second magnetic layer having a pinned magnetization; and a contact plug arranged at one side of and separated from the variable resistance element to include a magnetization compensation layer that produces a magnetic field to reduce an influence of a magnetic field of the second magnetic layer on the first magnetic layer. |
| 申请公布号 |
US2015032960(A1) |
申请公布日期 |
2015.01.29 |
| 申请号 |
US201314142911 |
申请日期 |
2013.12.29 |
| 申请人 |
SK hynix Inc. |
发明人 |
Dong Cha-Deok |
| 分类号 |
H01L45/00;G06F12/08 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An electronic device comprising a semiconductor memory unit that includes:
a variable resistance element having a stacked structure of a first magnetic layer having a variable magnetization, a tunnel barrier layer, and a second magnetic layer having a pinned magnetization; and a contact plug arranged at one side of the variable resistance element and separated from the variable resistance element, the contact plug comprising a magnetization compensation layer that produces a magnetic field at the variable resistance element to reduce an influence of a magnetic field of the second magnetic layer on the first magnetic layer. |
| 地址 |
Icheon-Si KR |
