| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist underlayer film material that is strippable with alkaline water and can be stripped without damaging an ion-implanted Si substrate or SiOsubstrate because a novolak resin having a recurring unit derived from at least one of phenolphthalein, phenol red, cresol phthalein, cresol red, and thymolphthalein is hydrolyzed in alkaline water to generate a carboxyl group or a sulfo group and turns soluble with an alkaline aqueous solution.SOLUTION: The present invention provides a photoresist underlayer film material for use in lithography which comprises a novolak resin having a recurring unit derived from at least one of a substituted or unsubstituted phenolphthalein, phenol red, cresol phthalein, cresol red, and thymolphthalein. |
