| 摘要 |
<p>A wafer and a method for manufacturing the wafer are provided to improve the electrical characteristic of the passive device by decreasing the number of oxygen induction thermal donors. A wafer(100) comprises a front side(110), a rear side(120), and a high vacancy density region(130). The high public density region is arranged between the front side and the rear side, and has public oxygen composites(160). The public oxygen composite have the VO centers binding the oxygen with the vacancies between lattices.</p> |
