| 摘要 |
PROBLEM TO BE SOLVED: To stabilize film quality of an oxide semiconductor while utilizing characteristics of the oxide semiconductor such as high mobility.SOLUTION: A semiconductor device SD comprises an oxide semiconductor layer SML and an electrode EL1. The electrode EL1 is connected to one surface of the oxide semiconductor layer SML. The oxide semiconductor layer SML includes a part from the one surface to a depth t as an ordered layer ODL. The ordered layer ODL is a region including a plurality of ordered regions in which a sequence of atoms follows a specific rule. A maximum width of the ordered region at a cross section in a direction perpendicular to the one surface is 2 nm and under. |
