METHOD OF FORMING A SEMICONDUCTOR STRUCTURE INCLUDING SILICIDED AND NON-SILICIDED CIRCUIT ELEMENTS

摘要

A method includes providing a semiconductor structure including at least one first circuit element including a first semiconductor material and at least one second circuit element including a second semiconductor material. A dielectric layer having an intrinsic stress is formed that includes a first portion over the at least one first circuit element and a second portion over the at least one second circuit element. A first annealing process is performed, wherein an intrinsic stress is created at least in the first semiconductor material by stress memorization, and thereafter the first portion of the dielectric layer is removed. A layer of a metal is formed, and a second annealing process is performed, wherein the metal and the first semiconductor material react chemically to form a silicide. The second portion of the dielectric layer substantially prevents a chemical reaction between the second semiconductor material and the metal.

主权项

1. A method, comprising:
providing a semiconductor structure comprising at least one first circuit element comprising a first semiconductor material and at least one second circuit element comprising a second semiconductor material; forming a dielectric layer having an intrinsic stress, said dielectric layer comprising a first portion over said at least one first circuit element and a second portion over at least a portion of each of said at least one second circuit element; performing a first annealing process, wherein an intrinsic stress is created at least in said first semiconductor material by stress memorization; and after said first annealing process, removing said first portion of said dielectric layer, forming a layer of a metal and performing a second annealing process wherein said metal and said first semiconductor material react chemically to form a silicide, said second portion of said dielectric layer substantially preventing a chemical reaction between said second semiconductor material and said metal in at least a portion of each of said at least one second circuit element.