发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
摘要 |
<p>PROBLEM TO BE SOLVED: To achieve improvement in efficiency of mounting a plurality of second semiconductor chips on a plurality of first semiconductor chips in a wafer state.SOLUTION: A semiconductor device manufacturing method comprises: a process of preparing a first semiconductor wafer which has a plurality of first semiconductor chips on one surface of which a plurality of first bump electrodes are formed; a process of preparing a second semiconductor wafer which has a plurality of second semiconductor chips on one surface of which a plurality of second bump electrodes are formed and is held by a support substrate from the other surface; a process of cutting the second semiconductor wafer held by the support substrate from one surface side to isolate the plurality of second semiconductor chips; and a process of collectively laminating the plurality of second semiconductor chips held on the support substrate on the first semiconductor wafer after the process of isolation, and electrically connecting the plurality of second bump electrodes to the corresponding first bump electrodes, respectively.</p> |
申请公布号 |
JP2015018870(A) |
申请公布日期 |
2015.01.29 |
申请号 |
JP20130143812 |
申请日期 |
2013.07.09 |
申请人 |
MICRON TECHNOLOGY INC |
发明人 |
WATABE MITSUHISA;WATANABE FUMITOMO |
分类号 |
H01L25/065;H01L21/301;H01L21/304;H01L25/07;H01L25/18 |
主分类号 |
H01L25/065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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