| 发明名称 |
III-V Semiconductor Device with Interfacial Layer |
| 摘要 |
A semiconductor structure comprises a substrate including a III-V material, and a high-k interfacial layer overlaying the substrate. The interfacial layer includes a rare earth aluminate. The present disclosure also relates to an n-type FET device comprising the same, and a method for manufacturing the same. |
| 申请公布号 |
US2015028428(A1) |
申请公布日期 |
2015.01.29 |
| 申请号 |
US201414341629 |
申请日期 |
2014.07.25 |
| 申请人 |
IMEC VZW ;Katholieke Universiteit Leuven, KU LEUVEN R&D |
发明人 |
Lin Han Chung;Nyns Laura;Ivanov Tsvetan;Van Dorp Dennis |
| 分类号 |
H01L29/51;H01L21/02;H01L29/20 |
主分类号 |
H01L29/51 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor structure comprising:
substrate comprising a III-V material; and high-k interfacial layer overlaying the substrate, wherein the interfacial layer comprises a rare earth aluminate. |
| 地址 |
Leuven BE |
