发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce leakage current of a transistor to suppress malfunction of a logic circuit.SOLUTION: A logic circuit comprises a transistor which comprises an oxide semiconductor layer having a function as a channel formation layer and in which off-state current per 1 μm in channel width is equal to or less than 1×10A. A first signal, a second signal, and a third signal that is a clock signal are input as input signals. A fourth signal and a fifth signal whose voltage states are set in accordance with the first signal to the third signal which have been input are output as output signals.
申请公布号 JP2015019383(A) 申请公布日期 2015.01.29
申请号 JP20140167165 申请日期 2014.08.20
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;KOYAMA JUN;TSUBUKI MASASHI;NODA KOSEI
分类号 H03K19/0175;H01L29/41;H01L29/786 主分类号 H03K19/0175
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