发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To reduce leakage current of a transistor to suppress malfunction of a logic circuit.SOLUTION: A logic circuit comprises a transistor which comprises an oxide semiconductor layer having a function as a channel formation layer and in which off-state current per 1 μm in channel width is equal to or less than 1×10A. A first signal, a second signal, and a third signal that is a clock signal are input as input signals. A fourth signal and a fifth signal whose voltage states are set in accordance with the first signal to the third signal which have been input are output as output signals. |
申请公布号 |
JP2015019383(A) |
申请公布日期 |
2015.01.29 |
申请号 |
JP20140167165 |
申请日期 |
2014.08.20 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;KOYAMA JUN;TSUBUKI MASASHI;NODA KOSEI |
分类号 |
H03K19/0175;H01L29/41;H01L29/786 |
主分类号 |
H03K19/0175 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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